GaN growth on (111) very thin amorphous SiN layer by ECR plasma-assisted MBE
Document title: GaN growth on (111) very thin amorphous SiN layer by ECR plasma-assisted MBE
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000252136
ISSN: 1665-3521
Authors: 1
2
Institutions: 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
2Osaka Institute of Technology, Asahi-ku, Osaka. Japón
Year:
Season: Dic
Volumen: 13
Pages: 80-88
Country: México
Language: Inglés
Document type: Artículo
Approach: Experimental, descriptivo
Disciplines: Ingeniería
Keyword: Ingeniería de materiales,
Películas,
Nitruro de galio,
Estructura
Keyword: Engineering,
Materials engineering,
Films,
Gallium nitride,
Structure
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