Journal: | Computational & applied mathematics |
Database: | PERIÓDICA |
System number: | 000310689 |
ISSN: | 0101-8205 |
Authors: | Leitao, Antonio1 |
Institutions: | 1Universidade Federal de Santa Catarina, Departamento de Matematica, Florianopolis, Santa Catarina. Brasil |
Year: | 2006 |
Volumen: | 25 |
Number: | 2-3 |
Pages: | 187-203 |
Country: | Brasil |
Language: | Inglés |
Document type: | Artículo |
Approach: | Experimental, aplicado |
English abstract | We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data |
Disciplines: | Ingeniería, Matemáticas |
Keyword: | Ingeniería de materiales, Matemáticas aplicadas, Semiconductores, Dopaje inverso, Modelo bipolar |
Keyword: | Engineering, Mathematics, Materials engineering, Applied mathematics, Semiconductors, Inverse doping, Bipolar model |
Full text: | Texto completo (Ver HTML) |