Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering



Document title: Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000387317
ISSN: 1665-3521
Authors: 1
1
1
2
2
3
Institutions: 1Universidad Nacional de Colombia, Escuela de Materiales, Medellín, Antioquia. Colombia
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
3Universidad del Tolima, Facultad de Ciencias, Ibagué, Tolima. Colombia
Year:
Season: Sep
Volumen: 27
Number: 3
Pages: 102-106
Country: México
Language: Inglés
Document type: Artículo
Approach: Experimental, aplicado
English abstract Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy
Disciplines: Ingeniería
Keyword: Ingeniería de materiales,
Arseniuro de galio,
Pulverización catódica,
Películas delgadas,
Propiedades ópticas,
Espectroscopía fotoacústica
Keyword: Engineering,
Materials engineering,
Gallium arsenide,
Magnetron sputtering,
Thin films,
Optical properties,
Photoacoustic spectroscopy
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