| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000387317 |
| ISSN: | 1665-3521 |
| Autores: | Bernal Correa, R1 Montes Monsalve, J1 Pulzara Mora, A1 López López, M2 Cruz Orea, A2 Cardona, J.A3 |
| Instituciones: | 1Universidad Nacional de Colombia, Escuela de Materiales, Medellín, Antioquia. Colombia 2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México 3Universidad del Tolima, Facultad de Ciencias, Ibagué, Tolima. Colombia |
| Año: | 2014 |
| Periodo: | Sep |
| Volumen: | 27 |
| Número: | 3 |
| Paginación: | 102-106 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Arseniuro de galio, Pulverización catódica, Películas delgadas, Propiedades ópticas, Espectroscopía fotoacústica |
| Keyword: | Engineering, Materials engineering, Gallium arsenide, Magnetron sputtering, Thin films, Optical properties, Photoacoustic spectroscopy |
| Texto completo: | Texto completo (Ver HTML) |
