Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy



Document title: Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000367975
ISSN: 1665-3521
Authors: 1
1
2
2
3
4
5
Institutions: 1Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, México, Distrito Federal. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
3Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, México, Distrito Federal. México
4Universidad del Tolima, Departamento de Física, Ibagué, Tolima. Colombia
5Universidad Autónoma de Querétaro, Facultad de Ingeniería, Querétaro. México
Year:
Season: Sep
Volumen: 25
Number: 3
Pages: 175-178
Country: México
Language: Inglés
Document type: Artículo
Approach: Experimental, aplicado
English abstract A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical modes were identified by performing Raman spectroscopy characterization at room temperature and observing the effect of the impurity concentration on the Raman mode frequencies. From secondary ion mass spectrometry the concentrations of Te in the liquid solutions and the electron densities present in the layers were obtained. Finally, these last results were compared with those obtained from low temperature photoluminescence spectroscopy measurements at low temperatures on this set of samples
Disciplines: Ingeniería
Keyword: Ingeniería de materiales,
Ingeniería química,
Semiconductores,
Antimonio,
Epitaxia,
Fase líquida
Keyword: Engineering,
Chemical engineering,
Materials engineering,
Semiconductors,
Antimony,
Epitaxy,
Liquid phase
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