| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000367975 |
| ISSN: | 1665-3521 |
| Autores: | Bravo García, Y.E1 Zapata Torres, M1 Rodríguez Fragoso, P2 Mendoza Alvarez, J.G2 Herrera Pérez, J.L3 Cardona Bedoya, J.A4 Gómez Herrera, M.L5 |
| Instituciones: | 1Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, México, Distrito Federal. México 2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México 3Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, México, Distrito Federal. México 4Universidad del Tolima, Departamento de Física, Ibagué, Tolima. Colombia 5Universidad Autónoma de Querétaro, Facultad de Ingeniería, Querétaro. México |
| Año: | 2012 |
| Periodo: | Sep |
| Volumen: | 25 |
| Número: | 3 |
| Paginación: | 175-178 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical modes were identified by performing Raman spectroscopy characterization at room temperature and observing the effect of the impurity concentration on the Raman mode frequencies. From secondary ion mass spectrometry the concentrations of Te in the liquid solutions and the electron densities present in the layers were obtained. Finally, these last results were compared with those obtained from low temperature photoluminescence spectroscopy measurements at low temperatures on this set of samples |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Ingeniería química, Semiconductores, Antimonio, Epitaxia, Fase líquida |
| Keyword: | Engineering, Chemical engineering, Materials engineering, Semiconductors, Antimony, Epitaxy, Liquid phase |
| Texto completo: | Texto completo (Ver HTML) |
