MOCVD GaInP heterojunction bipolar transistor current gain stability
Document title: MOCVD GaInP heterojunction bipolar transistor current gain stability
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000252055
ISSN: 1665-3521
Authors: 1
Institutions: 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Year:
Season: Dic
Volumen: 13
Pages: 54-56
Country: México
Language: Inglés
Document type: Artículo
Approach: Experimental, descriptivo
Disciplines: Ingeniería
Keyword: Ingeniería de materiales,
Heterouniones,
Transistores,
Galio,
Indio
Keyword: Engineering,
Materials engineering,
Heterojunctions,
Transistors,
Gallium,
Indium
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).