Journal: | Superficies y vacío |
Database: | PERIÓDICA |
System number: | 000404986 |
ISSN: | 1665-3521 |
Authors: | Pérez Ladrón de Guevara, H1 Navarro Contreras, H1 Vidal, M.A1 |
Institutions: | 1Universidad Autónoma de San Luis Potosí, Instituto de Investigación en Comunicación Optica, San Luis Potosí. México |
Year: | 2003 |
Season: | Dic |
Volumen: | 16 |
Number: | 4 |
Pages: | 22-24 |
Country: | México |
Language: | Inglés |
Document type: | Artículo |
Approach: | Analítico |
English abstract | Single phase Ge1-xSnx alloys have been grown on Ge(100) and GaAs(100) substrates using a R. F. Sputtering system. Using HRXRD on asymmetrical planes in plane and in growth lattice parameters are obtained. A residual strain due to the differences in the linear thermal expansion coefficient between the alloy and the substrates is observed |
Disciplines: | Física y astronomía, Ingeniería |
Keyword: | Física de materia condensada, Ingeniería de materiales, Aleaciones, Germanio, Estaño, Pulverización catódica, Películas delgadas, Semiconductores |
Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, Alloys, Germanium, Tin, Sputtering, Thin films, Semiconductors |
Full text: | Texto completo (Ver PDF) |