| Journal: | Superficies y vacío |
| Database: | PERIÓDICA |
| System number: | 000404806 |
| ISSN: | 1665-3521 |
| Authors: | Peykov, P1 Aceves, M1 Diaz, T2 |
| Institutions: | 1Instituto Nacional de Astrofísica, Optica y Electrónica, Puebla. México 2Benemérita Universidad Autónoma de Puebla, Centro de Investigaciones en Dispositivos Semiconductores, Puebla. México |
| Year: | 2004 |
| Season: | Jun |
| Volumen: | 17 |
| Number: | 2 |
| Pages: | 29-31 |
| Country: | México |
| Language: | Español |
| Document type: | Artículo |
| Approach: | Analítico |
| English abstract | A lineal-voltage sweep technique for measurements of recombination lifetime in MOS structures is proposed. When a fast lineal – voltage ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electronhole generation start in the space charge region and in the bulk. At elevated temperature the quasi-neutral region generation dominates rather than the space charge region generation. Then the diffusion length, and consequently the recombination lifetime, can be determined. Experimental results are shown |
| Disciplines: | Física y astronomía, Ingeniería, Química |
| Keyword: | Física de materia condensada, Ingeniería de materiales, Fisicoquímica y química teórica, Estructuras MOS, Semiconductores, Electroquímica |
| Keyword: | Physics and astronomy, Engineering, Chemistry, Condensed matter physics, Physics, Materials engineering, Physical and theoretical chemistry, MOS structures, Semiconductors, Electrochemistry |
| Full text: | Texto completo (Ver PDF) |
