| Journal: | Superficies y vacío |
| Database: | PERIÓDICA |
| System number: | 000404987 |
| ISSN: | 1665-3521 |
| Authors: | Yu Zhenrui1 Aceves, Mariano1 Carrillo, Jesús2 Flores, Francisco2 |
| Institutions: | 1Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México 2Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México |
| Year: | 2003 |
| Season: | Dic |
| Volumen: | 16 |
| Number: | 4 |
| Pages: | 25-29 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico |
| English abstract | In this article, the observation of charge trapping effect of silicon rich oxide (SRO) layer in an Al/SRO/Al on Si structure by lateral electrical stress is reported. The density of trapped charges depends on the deposition and post-treatment conditions of the SRO layer. For the Al/SRO/Al structure grown on n-Si substrates, positive trapped charges were observed. A model is proposed to interpret the experimental results |
| Disciplines: | Física y astronomía, Ingeniería |
| Keyword: | Física de materia condensada, Ingeniería de materiales, Ingeniería electrónica, Estado sólido, Transporte electrónico, Semiconductores, Dieléctricos, Películas delgadas, Silicio, Nanocristales |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Materials engineering, Solid state, Electronic transport, Semiconductors, Dielectrics, Thin films, Silicon, Nanocrystals |
| Full text: | Texto completo (Ver PDF) |
