Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications



Document title: Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000245594
ISSN: 0035-001X
Authors: 1


Institutions: 1Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México
Year:
Season: Feb
Volumen: 52
Number: 2
Pages: 45-47
Country: México
Language: Inglés
Document type: Artículo
Approach: Experimental, descriptivo
Disciplines: Ingeniería,
Física y astronomía
Keyword: Ingeniería de materiales,
Física,
Oxido de silicio,
Capacitores,
Resistividad
Keyword: Engineering,
Physics and astronomy,
Materials engineering,
Physics,
Silica,
Capacitors,
Resistivity
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