Investigation of the anisotropic etching process used for semiconductor pressure sensors fabrication
Document title: Investigation of the anisotropic etching process used for semiconductor pressure sensors fabrication
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000114787
ISSN: 0035-001X
Authors: 1
Institutions: 1Benemérita Universidad Autónoma de Puebla, Inst Ciencias, Dep Semiconductores, Puebla. México
2Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México
Year:
Season: Feb
Volumen: 39
Number: 1
Pages: 120-127
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía,
Ingeniería
Keyword: Física de materia condensada,
Ingeniería de instrumentos,
Semiconductores,
Grabado,
Anisotropía,
Sensores-presion,
Silicio,
Obleas
Keyword: Physics and astronomy,
Engineering,
Condensed matter physics,
Instrumentation engineering,
Semiconductors,
Etching,
Anisotropy,
Pressure sensors,
Silicon,
Wafers
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