| Journal: | Revista brasileira de ensino de fisica |
| Database: | PERIÓDICA |
| System number: | 000314954 |
| ISSN: | 0102-4744 |
| Authors: | Amato, M.A1 |
| Institutions: | 1Universidade de Brasilia, Instituto de Fisica, Brasilia, Distrito Federal. Brasil |
| Year: | 2002 |
| Season: | Dic |
| Volumen: | 24 |
| Number: | 4 |
| Pages: | 379-382 |
| Country: | Brasil |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico, descriptivo |
| English abstract | It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure |
| Disciplines: | Física y astronomía |
| Keyword: | Física, Semiconductores, Razones de transición |
| Keyword: | Physics and astronomy, Physics, Semiconductors, Transition rates |
| Full text: | Texto completo (Ver HTML) |
