| Revista: | Revista brasileira de ensino de fisica |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000314954 |
| ISSN: | 0102-4744 |
| Autors: | Amato, M.A1 |
| Institucions: | 1Universidade de Brasilia, Instituto de Fisica, Brasilia, Distrito Federal. Brasil |
| Any: | 2002 |
| Període: | Dic |
| Volum: | 24 |
| Número: | 4 |
| Paginació: | 379-382 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, descriptivo |
| Resumen en inglés | It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure |
| Disciplines | Física y astronomía |
| Paraules clau: | Física, Semiconductores, Razones de transición |
| Keyword: | Physics and astronomy, Physics, Semiconductors, Transition rates |
| Text complet: | Texto completo (Ver HTML) |
