SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties



Título del documento: SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties
Revue: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000368723
ISSN: 0035-001X
Autores: 1
2
2
2
2
2
2
Instituciones: 1Universidad Autónoma de Querétaro, Facultad de Química, Querétaro. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Año:
Periodo: Jul-Ago
Volumen: 59
Número: 4
Paginación: 335-338
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés SnO2:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF2 as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500°C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO2 and SnO. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO2 thin films grown with small SnF2 content in the target can be considered as candidates for transparent electrodes
Disciplinas: Física y astronomía,
Química
Palabras clave: Física,
Fisicoquímica y química teórica,
Oxido de estaño dopado con F,
Oxidos conductores transparentes,
Bombardeo iónico por magnetrón,
Electrodos transparentes
Keyword: Physics and astronomy,
Chemistry,
Physics,
Physical and theoretical chemistry,
F-doped tin oxide,
Transparent conducting oxides,
Magnetron sputtering,
Transparent electrodes
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