SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties



Document title: SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000368723
ISSN: 0035-001X
Authors: 1
2
2
2
2
2
2
Institutions: 1Universidad Autónoma de Querétaro, Facultad de Química, Querétaro. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Year:
Season: Jul-Ago
Volumen: 59
Number: 4
Pages: 335-338
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract SnO2:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF2 as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500°C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO2 and SnO. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO2 thin films grown with small SnF2 content in the target can be considered as candidates for transparent electrodes
Disciplines: Física y astronomía,
Química
Keyword: Física,
Fisicoquímica y química teórica,
Oxido de estaño dopado con F,
Oxidos conductores transparentes,
Bombardeo iónico por magnetrón,
Electrodos transparentes
Keyword: Physics and astronomy,
Chemistry,
Physics,
Physical and theoretical chemistry,
F-doped tin oxide,
Transparent conducting oxides,
Magnetron sputtering,
Transparent electrodes
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