| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000363496 |
| ISSN: | 0035-001X |
| Autores: | Domínguez, M1 Rosales, P1 Torres, A1 |
| Instituciones: | 1Instituto Nacional de Astrofísica, Optica y Electrónica, Departamento de Electrónica, Tonantzintla, Puebla. México |
| Año: | 2013 |
| Periodo: | Ene-Feb |
| Volumen: | 59 |
| Número: | 1 |
| Paginación: | 62-65 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200°C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 106 and off-current approximately of 0.3 × 10-12 A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Películas delgadas, Silicio amorfo hidrogenado, Bajas temperaturas, Modelo espin uno, Spice |
| Keyword: | Physics and astronomy, Physics, Thin films, Hydrogenated amorphous silicon, Low temperatures, Spin-one model, Spice |
| Texte intégral: | Texto completo (Ver PDF) |
