| Revue: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000426112 |
| ISSN: | 0035-001X |
| Autores: | Martín, J.A1 Sánchez, M2 |
| Instituciones: | 1Universidad de Ciego de Avila, Facultad de Informática y Ciencias Exactas, Ciego de Avila. Cuba 2Universidad de La Habana, Facultad de Física, La Habana. Cuba |
| Año: | 2018 |
| Periodo: | May-Jun |
| Volumen: | 64 |
| Número: | 3 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work the influence of GaN substrate thickness on the near and far-field patterns of InGaN lasers structures is numerically studied. In simulation a typical structure with an InGaN-MQW active region, GaN waveguide and AlxGa1−xN cladding layers is considered. A fluctuating behavior was obtained showing that for some values of the substrate thickness the near and far-field patterns can be optimized, while there are critical values that significantly reduce the confinement factor and widen the far field patterns. It is also shown that, replacing the n-GaN contact layer by a graded index (GRIN) AlxGa1−xN layer can help reduce the optical field leakage to substrate. Simulation results indicate that properly choosing the thickness of the substrate and using a GRIN n-AlxGa1−xN contact layer it is possible to improve both the confinement factor and far field patterns in nitride lasers |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Optica, Fuga de campo óptico, Simulación numérica, Diodos láser InGaN, Sustratos GaN |
| Keyword: | Optics, Optical field leakage, Numerical simulation, InGaN laser diodes, GaN substrates |
| Texte intégral: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
