| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000330203 |
| ISSN: | 0103-9733 |
| Autores: | Sarma, R1 Saikia, D2 Saikia, Puja2 Saikia, P.K2 Baishya, B2 |
| Instituciones: | 1J B College, Thin Film Laboratory, Assam, Bharat. India 2Dibrugarh University, Assam, Bharat. India |
| Año: | 2010 |
| Periodo: | Sep |
| Volumen: | 40 |
| Número: | 3 |
| Paginación: | 357-360 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, descriptivo |
| Resumen en inglés | We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 104 and mobility is 0.13cm2/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature |
| Disciplinas: | Química, Física y astronomía, Ingeniería |
| Palabras clave: | Ingeniería electrónica, Constante dieléctrica, Pentaceno, Transistores, Voltaje, Películas delgadas |
| Keyword: | Chemistry, Physics and astronomy, Engineering, Electronic engineering, Dielectric constant, Transistors, Pentacene, Thin films, Voltage, Insulators |
| Texte intégral: | Texto completo (Ver HTML) |
