Revista: | Brazilian journal of physics |
Base de datos: | PERIÓDICA |
Número de sistema: | 000330203 |
ISSN: | 0103-9733 |
Autores: | Sarma, R1 Saikia, D2 Saikia, Puja2 Saikia, P.K2 Baishya, B2 |
Instituciones: | 1J B College, Thin Film Laboratory, Assam, Bharat. India 2Dibrugarh University, Assam, Bharat. India |
Año: | 2010 |
Periodo: | Sep |
Volumen: | 40 |
Número: | 3 |
Paginación: | 357-360 |
País: | Brasil |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Analítico, descriptivo |
Resumen en inglés | We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 104 and mobility is 0.13cm2/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature |
Disciplinas: | Química, Física y astronomía, Ingeniería |
Palabras clave: | Ingeniería electrónica, Constante dieléctrica, Pentaceno, Transistores, Voltaje, Películas delgadas |
Keyword: | Chemistry, Physics and astronomy, Engineering, Electronic engineering, Dielectric constant, Transistors, Pentacene, Thin films, Voltage, Insulators |
Texto completo: | Texto completo (Ver HTML) |