| Revue: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000310585 |
| ISSN: | 0103-9733 |
| Autores: | Cimpoiasu, Elena1 Stern, Eric Cheng, Guosheng Munden, Ryan Sanders, Aric Reed, Mark A |
| Instituciones: | 1Yale University, Electrical Engineering Department, New Haven, Connecticut. Estados Unidos de América |
| Año: | 2006 |
| Periodo: | Sep |
| Volumen: | 36 |
| Número: | 3B |
| Paginación: | 824-827 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental |
| Resumen en inglés | A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm²/Vs to below 1 cm²/Vs for carrier concentrations of 10(19) to 10(20) cm- 3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 10(20) to 10(22) cm- 3. For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Nitruro de galio, Nitruro de indio, Nanoalambres, Transporte de electrones |
| Keyword: | Physics and astronomy, Condensed matter physics, Gallium nitride, Indium nitride, Nanowires, Electron transport |
| Texte intégral: | Texto completo (Ver HTML) |
