| Journal: | Superficies y vacío |
| Database: | PERIÓDICA |
| System number: | 000404818 |
| ISSN: | 1665-3521 |
| Authors: | Yu, Z1 Aceves, M1 Carrillo, J2 Flores, F2 |
| Institutions: | 1Instituto Nacional de Astrofísica, Optica y Electrónica, Departamento de Electrónica, Tonantzintla, Puebla. México 2Benemérita Universidad Autónoma de Puebla, Centro de Investigación en Dispositivos Semiconductores, Puebla. México |
| Year: | 2004 |
| Season: | Sep |
| Volumen: | 17 |
| Number: | 3 |
| Pages: | 9-11 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Analítico |
| English abstract | I-V characteristics of Al/SRO/Si MOS devices were measured. Novel I-V curves, with extraordinary current peaks in both positive and negative bias, were observed. These current peaks are ascribed to the charging or discharging of the Si nanoclusters near the SRO/Si interface |
| Disciplines: | Física y astronomía, Ingeniería |
| Keyword: | Física de materia condensada, Ingeniería de materiales, Ingeniería electrónica, Silicio, Estructuras MOS |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Materials engineering, Silicon, MOS structures |
| Full text: | Texto completo (Ver PDF) |
