| Journal: | Superficies y vacío |
| Database: | PERIÓDICA |
| System number: | 000365826 |
| ISSN: | 1665-3521 |
| Authors: | Cabrera, C. I1 Rimada, J. C2 Hernández, L3 Contreras Solorio, D. A4 |
| Institutions: | 1Universidad de Pinar del Río, Departamento de Física, Pinar del Río. Cuba 2Universidad de La Habana, Instituto de Ciencia y Tecnología de Materiales, La Habana. Cuba 3Universidad de La Habana, Facultad de Física, La Habana. Cuba 4Universidad Autónoma de Zacatecas, Unidad Académica de Física, Zacatecas. México |
| Year: | 2012 |
| Season: | Dic |
| Volumen: | 25 |
| Number: | 4 |
| Pages: | 234-239 |
| Country: | México |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Experimental, aplicado |
| English abstract | A design of de GaAsP/InGaAs/GaAs solar cell is presented that allows to model high efficiency devices. The stress, tensile and compressive, are considered in order to compute the electron and hole dispersion relation E(k) in conduction and valence band. Similarly, the optical transitions in quantum well and barriers were evaluated to calculate the quantum internal efficiency and the photocurrent. GaAsP/InGaAs/GaAs solar cell is optimized to reach the maximum performance by means of J-V relation. Our model was used to determine the highest efficiencies for cells containing quantum wells under varying degrees of strain, showing that cells with strained quantum wells achieve high efficiencies |
| Disciplines: | Ingeniería, Química |
| Keyword: | Ingeniería de materiales, Ingeniería eléctrica, Celdas solares, Eficiencia de conversión, Pozos cuánticos |
| Keyword: | Engineering, Chemistry, Electrical engineering, Materials engineering, Solar cells, Conversion efficiency, Quantum wells |
| Full text: | Texto completo (Ver HTML) |
