Highly efficent individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
Document title: Highly efficent individually addressable diode lasers at 830 nm grown by solid source molecular beam epitaxy
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000252031
ISSN: 1665-3521
Authors: 1
Institutions: 1Lasertel Inc, Tucson, Arizona. Estados Unidos de América
Year:
Season: Dic
Volumen: 13
Pages: 7-9
Country: México
Language: Inglés
Document type: Artículo
Approach: Descriptivo
Disciplines: Física y astronomía
Keyword: Física,
Optica,
Diodos,
Láser,
Eficiencia
Keyword: Physics and astronomy,
Optics,
Physics,
Diodes,
Laser,
Efficiency
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