Growth and characterization of Ge1-xSnx alloys grown on Ge(001) and GaAs(001)



Document title: Growth and characterization of Ge1-xSnx alloys grown on Ge(001) and GaAs(001)
Journal: Superficies y vacío
Database: PERIÓDICA
System number: 000404717
ISSN: 1665-3521
Authors: 1
2
2
2
Institutions: 1Instituto Tecnológico de San Luis Potosí, San Luis Potosí. México
2Universidad Autónoma de San Luis Potosí, Instituto de Investigación en Comunicación Optica, San Luis Potosí. México
Year:
Season: Dic
Volumen: 17
Number: 4
Pages: 10-14
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
English abstract Single crystal Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates using a RF magnetron Sputtering. HRXRD and Raman spectroscopy were used to determine the Sn concentration of the alloys, HRXRD also shows that alloys with Sn<0.04 are pseudomorphic. Optical properties of the alloys were analysed in order to determinate the band gap transitions
Disciplines: Física y astronomía,
Ingeniería
Keyword: Física de materia condensada,
Ingeniería de materiales,
Aleaciones,
Semiconductores,
Germanio,
Estaño
Keyword: Physics and astronomy,
Engineering,
Condensed matter physics,
Materials engineering,
Alloys,
Semiconductors,
Germanium,
Tin
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