Water effect in the synthesis of nanostructured thin films of HfO2 deposited by the ultrasonic spray pyrolysis technique
Título del documento: Water effect in the synthesis of nanostructured thin films of HfO2 deposited by the ultrasonic spray pyrolysis technique
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000447314
ISSN: 0035-001X
Autores: 1
1
2
3
4
1
Instituciones: 1Instituto Politécnico Nacional, Escuela Superior de Cómputo, Ciudad de México. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, Ciudad de México. México
3Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Ciudad de México. México
4Universidad Nacional Autónoma de México, Facultad de Ciencias, Ciudad de México. México
Año:
Periodo: Sep-Oct
Volumen: 67
Número: 5
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés HfO2 thin films are proposed as a high-k dielectric gate, especially for the fabrication of ultra-large-scale integration systems. The effect of adding deionized water during the synthesis of HfO2 thin films on its structural and dielectric properties is reported. The study of nanostructured HfO2 thin films deposited on crystalline silicon wafers is made by applying the ultrasonic spray pyrolysis (USP) technique. For the synthesis of hafnium oxide thin films, hafnium acetylacetonate was dissolved in dimethylformamide as a hafnium source material. The substrate temperature was varied from 400◦C and up to 550◦C in increments of 50◦C and adding deionized water during the process, favoring films with well-defined monoclinic structures. The thin films presented a nanostructured morphology and a rugosity with a minimum value of 0.45 nm. Refractive index values between 1.87 and 2.02 were obtained with an average thickness of ∼21 nm. The carbon and O-H bonds decrease considerably, adding deionized water during the deposit. The electrical characterization revealed that the films deposited with deionized water have a high dielectric constant with a maximum value of 14.4, demonstrating that this addition during deposition allows thinner films with good dielectric properties
Disciplinas: Física y astronomía
Palabras clave: Física,
Películas delgadas nanoestructuradas,
Proceso USP,
Fuente metal-orgánica,
Estructuras de cristal,
Dieléctricos de alto K
Keyword: Physics,
Nanostructured thin films,
USP process,
Metal-organic source,
Crystal structures,
High-K dielectrics
Texto completo: Texto completo (Ver HTML) Texto completo (Ver PDF)