The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound



Document title: The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000427181
ISSN: 0035-001X
Authors: 1
2
2
2
Institutions: 1Instituto Venezolano de Investigaciones Científicas, Centro de Investigación y Tecnología de Materiales, Caracas, Distrito Federal. Venezuela
2Universidad de Los Andes, Facultad de Ciencias, Mérida. Venezuela
Year:
Season: Nov-Dic
Volumen: 63
Number: 6
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa3Te5, a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P 4 ¯2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is θ ≈ 125 K. This is comparable with 3/4 θ D ≈ 156K, θ D being the Debye temperature of the compound
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Absorción óptica
Keyword: Estructura de banda electrónica,
Condensed matter physics,
Semiconductors,
Optical absorption,
Electronic band structure
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