| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000427181 |
| ISSN: | 0035-001X |
| Autores: | Marín, G1 Rincón, C2 Wasim, S. M2 Sánchez Pérez, G2 |
| Instituciones: | 1Instituto Venezolano de Investigaciones Científicas, Centro de Investigación y Tecnología de Materiales, Caracas, Distrito Federal. Venezuela 2Universidad de Los Andes, Facultad de Ciencias, Mérida. Venezuela |
| Año: | 2017 |
| Periodo: | Nov-Dic |
| Volumen: | 63 |
| Número: | 6 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa3Te5, a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P 4 ¯2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is θ ≈ 125 K. This is comparable with 3/4 θ D ≈ 156K, θ D being the Debye temperature of the compound |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Absorción óptica |
| Keyword: | Estructura de banda electrónica, Condensed matter physics, Semiconductors, Optical absorption, Electronic band structure |
| Texto completo: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
