The effect of extrinsic contamination on ion implantation gettering



Document title: The effect of extrinsic contamination on ion implantation gettering
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000017410
ISSN: 0035-001X
Authors: 1


Institutions: 1Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México
Year:
Season: Dic
Volumen: 41
Number: 6
Pages: 897-904
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Implantación de iones,
Recombinacion-portadores
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Ion implantation,
Carrier recombination,
Extrinsic contamination
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).