SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant
Document title: SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000164166
ISSN: 0035-001X
Authors: 1
Institutions: 1Benemérita Universidad Autónoma de Puebla, Instituto de Física, Puebla. México
2Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México
Year:
Season: Abr
Volumen: 43
Number: 2
Pages: 290-299
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física,
Física de materia condensada,
Semiconductores,
Películas delgadas,
Microscopía electrónica de barrido,
Espectroscopía,
Energía dispersiva,
Parámetros de crecimiento
Keyword: Physics and astronomy,
Condensed matter physics,
Physics,
Semiconductors,
Thin films,
Scanning electron microscopy,
Spectroscopy,
Dispersive energy,
Growth parameters
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