Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure



Document title: Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000378501
ISSN: 0035-001X
Authors: 1
2
2
Institutions: 1Universidad Autónoma del Estado de Morelos, Facultad de Ciencias Químicas e Ingeniería, Cuernavaca, Morelos. México
2Universidad Autónoma de Zacatecas, Unidad Académica de Física, Zacatecas. México
Year:
Season: Mar-Abr
Volumen: 60
Number: 2
Pages: 161-167
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in δ-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Indice de refracción,
Presión hidrostática,
Pozos cuánticos
Keyword: Physics and astronomy,
Condensed matter physics,
Refractive index,
Hydrostatic pressure,
Quantum wells
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