Planar waveguides produced by implanting Si and C ions in rutile



Document title: Planar waveguides produced by implanting Si and C ions in rutile
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000426111
ISSN: 0035-001X
Authors: 1
1
1
1
Institutions: 1Universidad Nacional Autónoma de México, Instituto de Física, Ciudad de México. México
Year:
Season: May-Jun
Volumen: 64
Number: 3
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract Planar waveguides were generated in samples of rutile crystal (TiO2) by bombarding with two types of ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefringence. The guide is generated due to damage caused by the ions in the crystal which change its index of refraction. Three parameters were used: the implantation ion energy, the implantation fluence, and the orientation of the crystallographic planes. The refractive index profile of the irradiated sample was calculated and together with the value of the optical barrier the comparison was made between the different waveguides generated
Disciplines: Física y astronomía
Keyword: Optica,
Guías de onda óptica,
Implantación de iones,
Rutilo,
Propiedades ópticas,
Cristales,
Iones,
Fluencias
Keyword: Optics,
Optical Waveguides,
Ion Implantation,
Rutile,
Optical properties,
Crystals,
Ions,
Fluences
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