Planar waveguides produced by implanting Si and C ions in rutile



Título del documento: Planar waveguides produced by implanting Si and C ions in rutile
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000426111
ISSN: 0035-001X
Autors: 1
1
1
1
Institucions: 1Universidad Nacional Autónoma de México, Instituto de Física, Ciudad de México. México
Any:
Període: May-Jun
Volum: 64
Número: 3
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés Planar waveguides were generated in samples of rutile crystal (TiO2) by bombarding with two types of ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefringence. The guide is generated due to damage caused by the ions in the crystal which change its index of refraction. Three parameters were used: the implantation ion energy, the implantation fluence, and the orientation of the crystallographic planes. The refractive index profile of the irradiated sample was calculated and together with the value of the optical barrier the comparison was made between the different waveguides generated
Disciplines Física y astronomía
Paraules clau: Optica,
Guías de onda óptica,
Implantación de iones,
Rutilo,
Propiedades ópticas,
Cristales,
Iones,
Fluencias
Keyword: Optics,
Optical Waveguides,
Ion Implantation,
Rutile,
Optical properties,
Crystals,
Ions,
Fluences
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