Gaussian superlattice in GaAs/GaInNAs solar cells



Document title: Gaussian superlattice in GaAs/GaInNAs solar cells
Journal: Revista mexicana de física
Database: PERIÓDICA
System number: 000425914
ISSN: 0035-001X
Authors: 1
1
1
1
3
Institutions: 1Universidad Autónoma de Zacatecas, Unidad Académica de Física, Zacatecas. México
2Universidad de La Habana, Facultad de Física, La Habana. Cuba
3Universidad de La Habana, Instituto de Ciencias de los Materiales y Tecnología, La Habana. Cuba
Year:
Season: May-Jun
Volumen: 63
Number: 3
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico, teórico
English abstract We present a new type of photovoltaic device where Gaussian superlattice is inserted in the i-region of a GaAs/GaInNAs p-i-n solar cell. A theoretical model is developed to study the performance of these devices. We establish a new criterion to calculate miniband widths in superlattice heterostructures in the presence of electric field. By optimizing miniband width, the spectral response of the cell in the energy region below the absorption edge of host material is significantly enhanced. Our results show that these devices could reach higher conversion efficiencies than the single-gap solar cell
Disciplines: Física y astronomía
Keyword: Física,
Modelado,
Superredes,
Celdas solares
Keyword: Physics,
Modeling,
Superlattices,
Solar cells
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