Journal: | Revista mexicana de física |
Database: | PERIÓDICA |
System number: | 000460765 |
ISSN: | 0035-001X |
Authors: | Amiri, S1 Agroui, K2 Amiri, B3 Abboun Abid, M4 Belghachi, A5 |
Institutions: | 1National Polytechnic School of Oran-Maurice Audin, Department of Electrical Engineering, Oran. Argelia 2Semiconductors Technology for Energetic Research Center, Argel. Argelia 3Higher Normal School of Bechar, Bechar. Argelia 4National Polytechnic School of Oran-Maurice Audin, Oran. Argelia 5Universite Tahri Mohammed, Bechar. Argelia |
Year: | 2022 |
Season: | May-Jun |
Volumen: | 68 |
Number: | 3 |
Country: | México |
Language: | Inglés |
Document type: | Artículo |
Approach: | Analítico, teórico |
English abstract | We study the electronic, the optical and the transport properties of both bulk materials ErN and Er0.125Ga0.875N, which crystallize in zinc-blind and wurtzite structures, respectively, and are utilized in quantum well devices. The properties are calculated using density functional theory (DFT), by applying the full-potential linearized augmented plane-wave (FP-LAPW) method with a spin-orbit coupling effect. The analysis of the electronic properties shows that ErN and Er0.125Ga0.875N have a band gap at 0.79 and 3.38 eV, respectively. On the other hand, the technology makes it possible to stack these materials for a quantum well heterostructure of Er0.125Ga0.875N/ErN. The optical properties such as optical coefficients, refractive index and extinction coefficient are discussed in detail. The transport properties of alloys are investigated using the semi-classical Boltzmann theory as implemented in the BoltzTraP code in conjunction with ab initio electronic structure calculations. Our findings suggest that Er doping of wide band gap semiconductors could be a viable option for quantum well devices |
Disciplines: | Física y astronomía |
Keyword: | Optica, GaN dopado con Er, Propiedades ópticas, Propiedades electrónicas |
Keyword: | Optics, Er-doped GaN, Optical properties, Electronic properties |
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