| Revista: | Revista mexicana de física |
| Base de datos: | |
| Número de sistema: | 000592458 |
| ISSN: | 0035-001X |
| Autores: | González Loera, G. J.1 Rodríguez Magdaleno, K. A.2 Nava Maldonado, F. M.2 Martínez Orozco, J. C.1 |
| Instituciones: | 1Universidad Autónoma de Zacatecas, Unidad Académica de Física, Zacatecas. México 2Universidad Autónoma de Zacatecas, Unidad Académica de Ciencias Químicas, Zacatecas. México |
| Año: | 2023 |
| Periodo: | May-Jun |
| Volumen: | 69 |
| Número: | 3 |
| País: | México |
| Idioma: | Inglés |
| Resumen en inglés | Without a doubt, the impact of the discovery of 2D systems such as graphene has led to both theoretical and experimental investigations of a large number of materials such as Silicene, Borene, Arsenene, Phosphorene, just to mention some of the most emblematic ones, but other materials and its heterostructures are also of interest. From this point of view, in this work we present the band structure, density of states as well as the imaginary part of the dielectric function of a 2D GaAs system, by means of a density functional theory implementation. The aim of this study is to investigate the basic physical properties for a freestanding 2D GaAs sheet, as well as the effect of Si substitutional atoms, since it has an amphoteric nature in the GaAs, which means that depending on which atom is substituted, this can be an n- or p-type impurity atom. We report, as expected, that the levels do indeed appear near the conduction band (or valence) if the impurity is n-type (or p-type), respectively. Also the density of states due to the impurity is modified as well as the imaginary part of the dielectric function. |
| Keyword: | Density functional theory, 2D systems, Impurities, GaAs. |
| Texto completo: | Texto completo (Ver PDF) Texto completo (Ver HTML) |
