Asymmetry in particle transport in slightly non-homogeneously doped silicon layers in low injection regime and quasi-neutrality condition
Título del documento: Asymmetry in particle transport in slightly non-homogeneously doped silicon layers in low injection regime and quasi-neutrality condition
Revista: Revista mexicana de física
Base de datos:
Número de sistema: 000592435
ISSN: 0035-001X
Autores: 1
2
Instituciones: 1Universidad Autónoma del Estado de Morelos, Instituto de Investigación en Ciencia Básica y Aplicada, Cuernavaca, Morelos. México
2Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ciencias, Cuernavaca, Morelos. México
Año:
Periodo: Ene-Feb
Volumen: 69
Número: 1
País: México
Idioma: Inglés
Resumen en inglés In this work a 1D slightly doped n-type Silicon layer is considered. Irreversible thermodynamics transport equations are used to obtain the spatial particle distribution in isothermal stationary state. The excess particle transport is studied in low injection regime and quasi-neutrality condition. The material is subjected to Dirichlet-Neumann (N-D) conditions at the boundaries. We wonder if an asymmetry of the particle flux exists when the boundary conditions are inverted. We find that the asymmetry does exist and a rectification factor may reach the value 0.35. We conclude that particle flux rectification seems to be featuring the particle transport in slightly non-homogeneously doped semiconductor when the excess hole concentration is smaller than the equilibrium hole concentration.
Keyword: Doped silicon films,
Inhomogeneous doping,
Low/high particle injection regime,
Irreversible thermodynamics,
Shokley-Read-Hall recombination
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