Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors



Document title: Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
Journal: Materials research
Database: PERIÓDICA
System number: 000312429
ISSN: 1516-1439
Authors: 1



Institutions: 1Universidade de Sao Paulo, Instituto de Fisica, Sao Carlos, Sao Paulo. Brasil
Year:
Season: Abr
Volumen: 2
Number: 2
Pages: 75-79
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Descriptivo
English abstract This paper presents a methodology for the preparation of a-HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality
Disciplines: Ingeniería
Keyword: Ingeniería de materiales,
Mercurio,
Plomo,
Crecimiento de cristales,
Conductividad eléctrica
Keyword: Engineering,
Materials engineering,
Mercury,
Lead,
Crystal growth,
Electrical conductivity
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