Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors



Título del documento: Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
Revista: Materials research
Base de datos: PERIÓDICA
Número de sistema: 000312429
ISSN: 1516-1439
Autores: 1



Instituciones: 1Universidade de Sao Paulo, Instituto de Fisica, Sao Carlos, Sao Paulo. Brasil
Año:
Periodo: Abr
Volumen: 2
Número: 2
Paginación: 75-79
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Descriptivo
Resumen en inglés This paper presents a methodology for the preparation of a-HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality
Disciplinas: Ingeniería
Palabras clave: Ingeniería de materiales,
Mercurio,
Plomo,
Crecimiento de cristales,
Conductividad eléctrica
Keyword: Engineering,
Materials engineering,
Mercury,
Lead,
Crystal growth,
Electrical conductivity
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