Journal: | Materials research |
Database: | PERIÓDICA |
System number: | 000312408 |
ISSN: | 1516-1439 |
Authors: | Veissid, N1 An, C.Y Silva, A. Ferreira da Souza, J.I. Pinto de |
Institutions: | 1Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo. Brasil |
Year: | 1999 |
Season: | Oct |
Volumen: | 2 |
Number: | 4 |
Pages: | 279-281 |
Country: | Brasil |
Language: | Inglés |
Document type: | Artículo |
Approach: | Experimental |
English abstract | The bandgap energy as a function of temperature has been determined for lead iodide. The monocrystal was obtained in a vacuum sealed quartz ampoule inside a vertical furnace by Bridgman's method. The optical transmittance measurement enables to evaluate the values of Eg. By a fitting procedure of Eg as a function of temperature is possible to extract the parameters that govern its behavior. The variation of Eg with temperature was determined as: Eg(T) = Eg(0) - aT2/(a + T), with: Eg(0) = (2.435 ± 0.008) eV, a = (8.7 ± 1.3) x 10-4 eV/K and a = (192 ± 90) K. The bandgap energy of lead iodide at room temperature was found to be 2.277 ± 0.007 eV |
Disciplines: | Ingeniería |
Keyword: | Ingeniería de control, Ingeniería de materiales, Propiedades ópticas, Plomo, Cristalización |
Keyword: | Engineering, Control engineering, Materials engineering, Optical properties, Lead, Crystallization |
Full text: | Texto completo (Ver HTML) |