Revista: | Materials research |
Base de datos: | PERIÓDICA |
Número de sistema: | 000312408 |
ISSN: | 1516-1439 |
Autores: | Veissid, N1 An, C.Y Silva, A. Ferreira da Souza, J.I. Pinto de |
Instituciones: | 1Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo. Brasil |
Año: | 1999 |
Periodo: | Oct |
Volumen: | 2 |
Número: | 4 |
Paginación: | 279-281 |
País: | Brasil |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Experimental |
Resumen en inglés | The bandgap energy as a function of temperature has been determined for lead iodide. The monocrystal was obtained in a vacuum sealed quartz ampoule inside a vertical furnace by Bridgman's method. The optical transmittance measurement enables to evaluate the values of Eg. By a fitting procedure of Eg as a function of temperature is possible to extract the parameters that govern its behavior. The variation of Eg with temperature was determined as: Eg(T) = Eg(0) - aT2/(a + T), with: Eg(0) = (2.435 ± 0.008) eV, a = (8.7 ± 1.3) x 10-4 eV/K and a = (192 ± 90) K. The bandgap energy of lead iodide at room temperature was found to be 2.277 ± 0.007 eV |
Disciplinas: | Ingeniería |
Palabras clave: | Ingeniería de control, Ingeniería de materiales, Propiedades ópticas, Plomo, Cristalización |
Keyword: | Engineering, Control engineering, Materials engineering, Optical properties, Lead, Crystallization |
Texto completo: | Texto completo (Ver HTML) |