RBS-channeling studies of ion implantation induced damage in silicon
Document title: RBS-channeling studies of ion implantation induced damage in silicon
Journal: Instrumentation & development
Database: PERIÓDICA
System number: 000197684
ISSN: 0187-8549
Authors: 1
Institutions: 1Universidad Nacional Autónoma de México, Instituto de Física, México, Distrito Federal. México
Year:
Volumen: 4
Number: 1
Pages: 21-26
Country: México
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física,
Física de materia condensada,
Cristales,
Redes,
Silicio,
Implantación de iones
Keyword: Physics and astronomy,
Condensed matter physics,
Physics,
Crystals,
Lattices,
Silicon,
Ion implantation,
Networks
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