Wire crystals of gaas and inas grown by molecular beam epitaxy on porous silicon
Document title: Wire crystals of gaas and inas grown by molecular beam epitaxy on porous silicon
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000007955
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade de Sao Paulo, Inst Fisica Quimica, Sao Carlos, Sao Paulo. Brasil
Year:
Season: Mar
Volumen: 24
Number: 1
Pages: 340-343
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física atómica y molecular,
Física de materia condensada,
Cúmulos,
Epitaxia,
Cristales,
Morfología,
Superficies,
Silicio poroso
Keyword: Physics and astronomy,
Atomic and molecular physics,
Condensed matter physics,
Epitaxy,
Crystals,
Surfaces,
Clusters,
Morphology,
Porous silicon
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