The role of doping on the ultrafast transport transient in p-GaAs and n-GaAs
Document title: The role of doping on the ultrafast transport transient in p-GaAs and n-GaAs
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000134759
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal do Ceara, Departamento de Fisica, Fortaleza, Ceara. Brasil
2Universidade Federal do Rio Grande do Norte, Departamento de Fisica Teorica e Experimental, Natal, Rio Grande do Norte. Brasil
Year:
Season: Dic
Volumen: 27A
Number: 4
Pages: 227-230
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Semiconductores,
Electrones,
Velocidad de arrastre,
Portadores,
Transporte
Keyword: Physics and astronomy,
Condensed matter physics,
Semiconductors,
Electrons,
Drift velocity,
Carriers,
Transport
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