Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes
Document title: Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000398964
ISSN: 0103-9733
Authors: 1
1
1
1
1
1
Institutions: 1University of Pretoria, Department of Physics, Pretoria, Gauteng. Sudáfrica
Year:
Season: Dic
Volumen: 44
Number: 6
Pages: 739-745
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
English abstract Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6HSiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current–voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface
Disciplines: Física y astronomía
Keyword: Física,
Rutenio,
Películas delgadas
Keyword: Physics and astronomy,
Physics,
Ruthenium,
Thin films
Full text: Texto completo (Ver PDF)