Revista: | Brazilian journal of physics |
Base de datos: | PERIÓDICA |
Número de sistema: | 000398964 |
ISSN: | 0103-9733 |
Autors: | Munthali, Kinnock V1 Theron, Chris1 Auret, F. Danie1 Coelho, Sergio M.M1 Prinsloo, Linda1 Njoroge, Eric1 |
Institucions: | 1University of Pretoria, Department of Physics, Pretoria, Gauteng. Sudáfrica |
Any: | 2014 |
Període: | Dic |
Volum: | 44 |
Número: | 6 |
Paginació: | 739-745 |
País: | Brasil |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Analítico |
Resumen en inglés | Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6HSiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current–voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface |
Disciplines | Física y astronomía |
Paraules clau: | Física, Rutenio, Películas delgadas |
Keyword: | Physics and astronomy, Physics, Ruthenium, Thin films |
Text complet: | Texto completo (Ver PDF) |