Silicon oxidation and oxynitridation in the ultrathin regime: ion scattering studies
Document title: Silicon oxidation and oxynitridation in the ultrathin regime: ion scattering studies
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000132012
ISSN: 0103-9733
Authors: 1
Institutions: 1Rutgers University, Dept. Chemistry Physics, Piscataway, New Jersey. Estados Unidos de América
Year:
Season: Jun
Volumen: 27
Number: 2
Pages: 302-313
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Química,
Física y astronomía
Keyword: Fisicoquímica y química teórica,
Física de materia condensada,
Películas delgadas,
Silicio,
Oxidación,
Dieléctricos,
Interfaces,
Iones
Keyword: Chemistry,
Physics and astronomy,
Physical and theoretical chemistry,
Condensed matter physics,
Thin films,
Silicon,
Oxidation,
Dielectrics,
Interface,
Ions
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