Silicon heavily doped mbe grown al 0.3 ga 0.7 as samples
Document title: Silicon heavily doped mbe grown al 0.3 ga 0.7 as samples
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000007959
ISSN: 0103-9733
Authors: 1
Institutions: 1Universidade Federal de Minas Gerais, Departamento de Física, Belo Horizonte, Minas Gerais. Brasil
Year:
Season: Mar
Volumen: 24
Number: 1
Pages: 363-369
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Silicio,
Aluminio,
Defectos,
Movilidad,
Foto-hall-mediciones,
Propiedades eléctricas
Keyword: Physics and astronomy,
Condensed matter physics,
Defects,
Silicon,
Aluminum,
Mobility,
Electrical properties,
Photo-hall measurements
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