Photoluminescence of Ge islands grown by ultra high vacuum-chemical vapor deposition on Si(100)
Document title: Photoluminescence of Ge islands grown by ultra high vacuum-chemical vapor deposition on Si(100)
Journal: Brazilian journal of physics
Database: PERIÓDICA
System number: 000134604
ISSN: 0103-9733
Authors: 1
Institutions: 1Pontificia Universidade Catolica do Rio de Janeiro, Dep. Ciencia Materiais Metalurgia, Rio de Janeiro. Brasil
2Ctr. Richerche Frascati, Frascati, Lazio. Italia
Year:
Season: Dic
Volumen: 27A
Number: 4
Pages: 181-184
Country: Brasil
Language: Inglés
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía
Keyword: Física de materia condensada,
Optica,
Semiconductores,
Fotoluminiscencia,
Depósito químico de vapor,
Islas de germanio,
Películas delgadas
Keyword: Physics and astronomy,
Condensed matter physics,
Optics,
Semiconductors,
Photoluminescence,
Chemical vapor deposition,
Germanium islands,
Thin films
Document request
Note: The document is shipping cost.









Original documents can be consulted at the Departamento de Información y Servicios Documentales, located in the Annex to the General Directorate of Libraries (DGB), circuito de la Investigación Científica across from the Auditorium Nabor Carrillo, located between the Institutes of Physics and Astronomy. Ciudad Universitaria UNAM. Show map
For more information: Departamento de Información y Servicios Documentales, Tels. (5255) 5622-3960, 5622-3964. E-mail: sinfo@dgb.unam.mx . Monday to Friday from (8 to 16 hrs).