Phenomenological Model for the metal-insulator transition in two dimensions



Título del documento: Phenomenological Model for the metal-insulator transition in two dimensions
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000329455
ISSN: 0103-9733
Autores: 1
Instituciones: 1Instituto de Desarrollo Tecnológico para la Industria Química, Santa Fe. Argentina
Año:
Periodo: Dic
Volumen: 39
Número: 4
Paginación: 715-717
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental
Resumen en inglés The resistivity measured in two-dimensional MOSFET geometry is modeled by considering that the resistivity is a function of the temperature and the areal density of charges (electrons or holes). The logistics differential equation is proposed for the behaviour of the resistivity as a function of temperature, so that the two phases are obtained in a natural manner. At low temperatures, the Drude model behaviour is assumed for the resistivity as a function of density. Two characteristics then follow in a natural manner: The existance of a characteristic temperature for resistivity as a function of temperature, and the symmetry relationship. If the magnetic field is incorporated into the Drude model, reasonable results are obtained for the qualitative behaviour of resistivity for weak fields
Disciplinas: Física y astronomía,
Matemáticas
Palabras clave: Física,
Física de materia condensada,
Matemáticas aplicadas,
Transición metal-aislante,
Ecuación de logística
Keyword: Physics and astronomy,
Mathematics,
Condensed matter physics,
Physics,
Applied mathematics,
Metal-insulator transition,
Logistics equation
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